| PART |
Description |
Maker |
| RA20H8087M-E01 RA20H8087M-01 RA20H8087M |
806-825/ 851-870MHz 20W 12.5V/ 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V 3 Stage Amp. For MOBILE RADIO
806-825/ 851-870MHz 20W 12.5V, 3 Stage Amp. For MOBILE RADIO 806-825 / 851 - 870MHz 202.5V阶段制造。对于移动通信
|
Mitsubishi Electric Sem...
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
|
| RA03M8087M-101 RA03M8087M RA03M8087M06 |
RoHS Compliance , 806-870MHz 3.6W 7.2V, 2 Stage Amp. For PORTABLE RADIO
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| D8740180GTH |
GaAs Power Doubler, 40 - 870MHz, 18.5dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
PREMIER DEVICES, INC.
|
| D8740240GTH |
GaAs Power Doubler, 40 - 870MHz, 24.0dB min. Gain @ 870MHz, High, 440mA max. @ 24VDC
|
http://
PREMIER DEVICES, INC.
|
| M67766C 67766C |
RF POWER MODULE 806-825MHz, 12.5V, 16W, DIGITAL MOBILE RADIO
From old datasheet system
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| S8740200P |
GaAs Push Pull, 40 - 870MHz, 20dB min. Gain @ 870MHz, 260mA max.
GaAs Push Pull Hybrid 40 - 870MHz 20dB min. Gain @ 870MHz 260mA max. @ 24VDC
|
List of Unclassifed Manufacturers
N.A.
ETC[ETC]
PREMIER DEVICES, INC.
|
| RD07MUS2B RD07MUS2B11 |
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz,7W
|
Mitsubishi Electric Semiconductor
|
| RD07MUS2B RD07MUS2B10 |
RoHS Compliance, Silicon MOSFET Power Transistor,175MHz,527MHz,870MHz 7W
|
Mitsubishi Electric Semiconductor
|
